RN1107CT(TPL3)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS PREBIAS NPN 20V 0.05A CST3
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The RN1107CT(TPL3) by Toshiba Semiconductor and Storage is a premier choice in the Discrete Semiconductor Products category. These Transistors - Bipolar (BJT) - Single, Pre-Biased are designed for precision and efficiency, featuring high gain bandwidth, low distortion, and excellent thermal management. Perfect for RF applications, sensor interfaces, and control systems. Toshiba Semiconductor and Storage stands for quality and innovation. Reach out to us for expert advice and competitive pricing!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 50 mA
- Voltage - Collector Emitter Breakdown (Max): 20 V
- Resistor - Base (R1): 10 kOhms
- Resistor - Emitter Base (R2): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 50 mW
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: CST3
Related Products
NXP USA Inc.
PDTB123TK,115
Infineon Technologies
BCR 149L3 E6327
onsemi
FJNS4207RBU
Panasonic Electronic Components
DRA3143E0L
Panasonic Electronic Components
DRC2144V0L
Panasonic Electronic Components
DRC5123J0L
Panasonic Electronic Components
UNR221800L
Panasonic Electronic Components
DRC2143Z0L
Rohm Semiconductor
DTB123ESTP
onsemi