RN1107,LF(CT
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS PREBIAS NPN 50V 0.1A SSM
$0.21
Available to order
Reference Price (USD)
3,000+
$0.03623
6,000+
$0.03150
15,000+
$0.02678
30,000+
$0.02520
75,000+
$0.02363
150,000+
$0.02100
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your projects with the RN1107,LF(CT by Toshiba Semiconductor and Storage, a top-tier choice in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single, Pre-Biased offer outstanding durability and precision, ensuring optimal performance in any circuit. Key features include high current gain, low saturation voltage, and thermal stability. Ideal for use in power management, signal processing, and automation systems. Toshiba Semiconductor and Storage guarantees top-notch quality and performance. Reach out now to learn more or request a sample!
Specifications
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 10 kOhms
- Resistor - Emitter Base (R2): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250 MHz
- Power - Max: 100 mW
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SSM
Related Products
Toshiba Semiconductor and Storage
RN1119MFV,L3F
Rohm Semiconductor
DTA144EKAT146
Rohm Semiconductor
DTC144TMT2L
onsemi
DTA124XET1G
Rohm Semiconductor
DTC044TUBTL
Infineon Technologies
BCR185WE6327
Diodes Incorporated
DDTC124TEQ-7-F
Nexperia USA Inc.
PDTC114YQCZ
Toshiba Semiconductor and Storage
RN1118(TE85L,F)
onsemi