RJU002N06T106
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 60V 200MA UMT3
$0.50
Available to order
Reference Price (USD)
3,000+
$0.08586
6,000+
$0.08109
15,000+
$0.07394
30,000+
$0.06917
75,000+
$0.06678
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with RJU002N06T106 by Rohm Semiconductor, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, RJU002N06T106 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 2.3Ohm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 18 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 200mW (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: UMT3
- Package / Case: SC-70, SOT-323
Related Products
Nexperia USA Inc.
PSMN1R4-30YLDX
Rohm Semiconductor
RD3L140SPFRATL
Alpha & Omega Semiconductor Inc.
AOT12N30L
Fairchild Semiconductor
FDU8770
Microchip Technology
APT1201R4BFLLG
Vishay Siliconix
SI4431BDY-T1-GE3
IXYS
IXFR64N50P
Rectron USA
RM150N100HD
Diodes Incorporated
ZXMN3A01E6TA
IXYS