RJP60F0DPE-00#J3
Renesas Electronics America Inc
Renesas Electronics America Inc
IGBT 600V 50A 122W LDPAK
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Choose RJP60F0DPE-00#J3 Single IGBTs by Renesas Electronics America Inc for superior power handling in demanding environments. From railway systems to industrial drives, these transistors excel with features like avalanche ruggedness and integrated diodes. Their modular design simplifies installation and maintenance. Renesas Electronics America Inc's reputation for quality makes RJP60F0DPE-00#J3 a smart investment. Email us now for datasheets and volume discounts!
Specifications
- Product Status: Obsolete
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 1.82V @ 15V, 25A
- Power - Max: 122 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 46ns/70ns
- Test Condition: 400V, 30A, 5Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-83
- Supplier Device Package: LDPAK
Related Products
Infineon Technologies
AUIRGU4045D
Infineon Technologies
IKW75N60TXK
Infineon Technologies
IRGP20B120U-EP
onsemi
SGH15N60RUFDTU
onsemi
HGTG30N60B3D
IXYS
IXGT30N60B2D1
STMicroelectronics
STGB20NC60V
Infineon Technologies
IRG6S330UPBF
STMicroelectronics
STGB7NC60HT4
IXYS