RJP4301APP-M0#T2
Renesas Electronics America Inc
Renesas Electronics America Inc
IGBT 430V TO200FL
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Optimize power control with RJP4301APP-M0#T2 Single IGBTs from Renesas Electronics America Inc, a leader in semiconductor solutions. Suited for medical equipment, aerospace, and consumer electronics, these transistors deliver precise switching and minimal noise. Highlights include high input impedance, scalable power ratings, and RoHS compliance. Renesas Electronics America Inc ensures RJP4301APP-M0#T2 meets rigorous performance benchmarks. Inquire today to find the perfect fit for your application!
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 430 V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 10V @ 26V, 200A
- Power - Max: 30 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 50ns/100ns
- Test Condition: 300V, 200A, 30Ohm, 26V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220FL
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