RJK6026DPE-00#J3
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 600V 5A 4LDPAK
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Discover RJK6026DPE-00#J3, a versatile Transistors - FETs, MOSFETs - Single solution from Renesas Electronics America Inc, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.4Ohm @ 2.5A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 62.5W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LDPAK
- Package / Case: SC-83
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