RJK5031DPD-00#J2
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 500V 3A MP3A
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Renesas Electronics America Inc presents RJK5031DPD-00#J2, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, RJK5031DPD-00#J2 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3.2Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 40.3W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: MP-3A
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
IXYS
IXFC16N50P
Vishay Siliconix
SI5402BDC-T1-E3
Infineon Technologies
IRF1104S
STMicroelectronics
STULED524
Infineon Technologies
IRF8252TRPBF-1
Vishay Siliconix
SI4176DY-T1-GE3
STMicroelectronics
STF13NM60N-H
Alpha & Omega Semiconductor Inc.
AOD418
Fairchild Semiconductor
IRFW710BTM
Infineon Technologies