RJK4532DPD-00#J2
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 450V 4A MP3A
$0.00
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Reference Price (USD)
3,000+
$0.51212
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose RJK4532DPD-00#J2 by Renesas Electronics America Inc. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with RJK4532DPD-00#J2 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 450 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.3Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 40.3W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: MP-3A
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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