RJK0652DPB-00#J5
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 60V 35A LFPAK
$1.17
Available to order
Reference Price (USD)
1+
$1.16900
500+
$1.15731
1000+
$1.14562
1500+
$1.13393
2000+
$1.12224
2500+
$1.11055
Exquisite packaging
Discount
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Boost your electronic applications with RJK0652DPB-00#J5, a reliable Transistors - FETs, MOSFETs - Single by Renesas Electronics America Inc. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, RJK0652DPB-00#J5 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 7mOhm @ 17.5A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 55W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK
- Package / Case: SC-100, SOT-669
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