RJK0330DPB-01#J0
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 30V 45A LFPAK
$1.19
Available to order
Reference Price (USD)
1+
$1.18570
500+
$1.173843
1000+
$1.161986
1500+
$1.150129
2000+
$1.138272
2500+
$1.126415
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose RJK0330DPB-01#J0 by Renesas Electronics America Inc. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with RJK0330DPB-01#J0 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 2.7mOhm @ 22.5A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 55W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK
- Package / Case: SC-100, SOT-669
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