RJK0301DPB-00#J0
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 30V 60A LFPAK
$1.88
Available to order
Reference Price (USD)
1+
$1.88000
500+
$1.8612
1000+
$1.8424
1500+
$1.8236
2000+
$1.8048
2500+
$1.786
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover RJK0301DPB-00#J0, a versatile Transistors - FETs, MOSFETs - Single solution from Renesas Electronics America Inc, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 2.8mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 65W (Tc)
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK
- Package / Case: SC-100, SOT-669
Related Products
Vishay Siliconix
SUM60061EL-GE3
Microchip Technology
APT1204R7SFLLG
Central Semiconductor Corp
CXDM4060N TR PBFREE
Nexperia USA Inc.
PSMN015-100P,127
onsemi
NTD4810N-1G
Fairchild Semiconductor
FQP9N08
IXYS
IXFH10N100P
Rohm Semiconductor
R6520KNJTL
STMicroelectronics
STP11NM65N
IXYS