RJH65T47DPQ-A0#T0
Renesas Electronics America Inc
Renesas Electronics America Inc
IGBT TRENCH 650V 90A TO247A
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The RJH65T47DPQ-A0#T0 Single IGBT by Renesas Electronics America Inc sets the standard for power semiconductor excellence. Designed for applications like electric vehicles and industrial machinery, it offers high current density and minimal thermal resistance. Key benefits include easy integration, superior durability, and compliance with international certifications. Partner with Renesas Electronics America Inc for cutting-edge solutions tailored to your needs. Contact us now to discuss specifications and delivery options!
Specifications
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 90 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 45A
- Power - Max: 375 W
- Switching Energy: 520µJ (on), 560µJ (off)
- Input Type: Standard
- Gate Charge: 127 nC
- Td (on/off) @ 25°C: 45ns/190ns
- Test Condition: 400V, 45A, 10Ohm, 15V
- Reverse Recovery Time (trr): 100 ns
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247A
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