RJH60F7DPQ-A0#T0
Renesas Electronics America Inc
Renesas Electronics America Inc
IGBT 600V 90A 328.9W TO247A
$0.00
Available to order
Reference Price (USD)
1+
$6.32000
10+
$5.64500
25+
$5.08040
100+
$4.62900
250+
$4.17736
500+
$3.74832
1,000+
$3.16124
2,500+
$3.01070
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The RJH60F7DPQ-A0#T0 Single IGBT from Renesas Electronics America Inc delivers unmatched performance in power conversion and control. Ideal for UPS systems, induction heating, and industrial automation, this transistor combines high efficiency with rugged reliability. Features such as short-circuit protection and low EMI make it a standout choice. Renesas Electronics America Inc's commitment to innovation ensures RJH60F7DPQ-A0#T0 meets the demands of modern electronics. Get in touch for bulk orders and customization options!
Specifications
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 90 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 50A
- Power - Max: 328.9 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 63ns/142ns
- Test Condition: 400V, 30A, 5Ohm, 15V
- Reverse Recovery Time (trr): 90 ns
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247A
Related Products
STMicroelectronics
STGBL6NC60DIT4
Infineon Technologies
IRG4IBC30FD
IXYS
IXSH30N60BD1
IXYS
IXDH30N120
Infineon Technologies
IRG7PG35U-EPBF
Infineon Technologies
SIGC81T60NCX1SA5
IXYS
IXGH50N60C4
IXYS
IXSH24N60BD1
Infineon Technologies
IRGP6650D-EPBF
IXYS