RJH60D5BDPQ-E0#T2
Renesas Electronics America Inc
Renesas Electronics America Inc
IGBT 600V 75A 200W TO-247
$0.00
Available to order
Reference Price (USD)
1+
$5.26000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize power control with RJH60D5BDPQ-E0#T2 Single IGBTs from Renesas Electronics America Inc, a leader in semiconductor solutions. Suited for medical equipment, aerospace, and consumer electronics, these transistors deliver precise switching and minimal noise. Highlights include high input impedance, scalable power ratings, and RoHS compliance. Renesas Electronics America Inc ensures RJH60D5BDPQ-E0#T2 meets rigorous performance benchmarks. Inquire today to find the perfect fit for your application!
Specifications
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 75 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 37A
- Power - Max: 200 W
- Switching Energy: 400µJ (on), 810µJ (off)
- Input Type: Standard
- Gate Charge: 78 nC
- Td (on/off) @ 25°C: 50ns/130ns
- Test Condition: 300V, 37A, 5Ohm, 15V
- Reverse Recovery Time (trr): 25 ns
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
Related Products
Infineon Technologies
IRGS4065PBF
Infineon Technologies
IRG4BC30FD-S
Infineon Technologies
IRGP4262D-EPBF
Renesas Electronics America Inc
RJH1CF7RDPQ-80#T2
IXYS
IXGH30N60C2D1
Infineon Technologies
IRG4PC60FPBF
STMicroelectronics
STGP30NC60K
Infineon Technologies
SGW15N120
IXYS
IXGR40N60BD1
Infineon Technologies