RGTH80TS65DGC11
Rohm Semiconductor
Rohm Semiconductor
IGBT 650V 70A 234W TO-247N
$0.00
Available to order
Reference Price (USD)
1+
$3.66000
10+
$3.28400
30+
$3.10500
120+
$2.69100
270+
$2.55300
510+
$2.29080
1,020+
$1.93200
Exquisite packaging
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The RGTH80TS65DGC11 Single IGBT by Rohm Semiconductor sets the standard for power semiconductor excellence. Designed for applications like electric vehicles and industrial machinery, it offers high current density and minimal thermal resistance. Key benefits include easy integration, superior durability, and compliance with international certifications. Partner with Rohm Semiconductor for cutting-edge solutions tailored to your needs. Contact us now to discuss specifications and delivery options!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 70 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
- Power - Max: 234 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 79 nC
- Td (on/off) @ 25°C: 34ns/120ns
- Test Condition: 400V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr): 58 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
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