RGTH50TS65GC13
Rohm Semiconductor
Rohm Semiconductor
HIGH-SPEED SWITCHING TYPE, 650V
$5.03
Available to order
Reference Price (USD)
1+
$5.03000
500+
$4.9797
1000+
$4.9294
1500+
$4.8791
2000+
$4.8288
2500+
$4.7785
Exquisite packaging
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The RGTH50TS65GC13 Single IGBT by Rohm Semiconductor sets the standard for power semiconductor excellence. Designed for applications like electric vehicles and industrial machinery, it offers high current density and minimal thermal resistance. Key benefits include easy integration, superior durability, and compliance with international certifications. Partner with Rohm Semiconductor for cutting-edge solutions tailored to your needs. Contact us now to discuss specifications and delivery options!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 100 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
- Power - Max: 174 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 49 nC
- Td (on/off) @ 25°C: 27ns/94ns
- Test Condition: 400V, 25A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247G
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