RGT16NS65DGC9
Rohm Semiconductor
Rohm Semiconductor
IGBT
$2.79
Available to order
Reference Price (USD)
1+
$2.79000
500+
$2.7621
1000+
$2.7342
1500+
$2.7063
2000+
$2.6784
2500+
$2.6505
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic designs with RGT16NS65DGC9 Single IGBTs from Rohm Semiconductor, built for high-power applications. Perfect for wind turbines, traction systems, and power tools, these transistors provide reliable performance under extreme conditions. Features like overcurrent protection and high-temperature operation ensure safety and efficiency. Rohm Semiconductor's expertise guarantees top-tier components for your critical projects. Reach out today for competitive pricing and technical details!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 16 A
- Current - Collector Pulsed (Icm): 24 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
- Power - Max: 94 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 21 nC
- Td (on/off) @ 25°C: 13ns/33ns
- Test Condition: 400V, 8A, 10Ohm, 15V
- Reverse Recovery Time (trr): 42 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
- Supplier Device Package: TO-262
Related Products
Infineon Technologies
IRG7PH42U-EP
Infineon Technologies
IGW50N60H3FKSA1
Infineon Technologies
IRGP4790PBF
Rohm Semiconductor
RGTV00TS65GC11
IXYS
IXBT6N170
Infineon Technologies
SKW20N60FKSA1
Infineon Technologies
IKW30N65ET7XKSA1
Rohm Semiconductor
RGWX5TS65GC11
Infineon Technologies
IKW75N65ES5XKSA1
IXYS