RGCL60TS60DGC13
Rohm Semiconductor
Rohm Semiconductor
LOW VCE(SAT) TYPE, 600V 30A, FRD
$6.25
Available to order
Reference Price (USD)
1+
$6.25000
500+
$6.1875
1000+
$6.125
1500+
$6.0625
2000+
$6
2500+
$5.9375
Exquisite packaging
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The RGCL60TS60DGC13 Single IGBT from Rohm Semiconductor delivers unmatched performance in power conversion and control. Ideal for UPS systems, induction heating, and industrial automation, this transistor combines high efficiency with rugged reliability. Features such as short-circuit protection and low EMI make it a standout choice. Rohm Semiconductor's commitment to innovation ensures RGCL60TS60DGC13 meets the demands of modern electronics. Get in touch for bulk orders and customization options!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 48 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
- Power - Max: 111 W
- Switching Energy: 770µJ (on), 1.11mJ (off)
- Input Type: Standard
- Gate Charge: 68 nC
- Td (on/off) @ 25°C: 44ns/186ns
- Test Condition: 400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): 58 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247G
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