RD3T050CNTL1
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 200V 5A TO252
$1.39
Available to order
Reference Price (USD)
2,500+
$0.46480
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with RD3T050CNTL1, a reliable Transistors - FETs, MOSFETs - Single by Rohm Semiconductor. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, RD3T050CNTL1 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 760mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id: 5.25V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 29W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Taiwan Semiconductor Corporation
TSM2328CX RFG
Infineon Technologies
IPA80R1K4P7XKSA1
Rohm Semiconductor
R6004KNJTL
Sanken
FKV550T
Diodes Incorporated
DMPH4011SK3-13
Yangzhou Yangjie Electronic Technology Co.,Ltd
YJL05N04A-F2-0000HF
Microchip Technology
APT6010B2LLG
Infineon Technologies
BTS129NKSA1
Vishay Siliconix
SUD50P04-08-GE3
Toshiba Semiconductor and Storage