RCX080N25
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 250V 8A TO220FM
$1.36
Available to order
Reference Price (USD)
1+
$1.08000
10+
$0.96200
100+
$0.74980
500+
$0.61940
1,000+
$0.48900
2,500+
$0.45640
Exquisite packaging
Discount
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Rohm Semiconductor presents RCX080N25, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, RCX080N25 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2.23W (Ta), 35W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-3 Full Pack
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