RBLQ3LAM10TFTR
Rohm Semiconductor
Rohm Semiconductor
TRENCH MOS STRUCTURE, 100V, 3A,
$0.39
Available to order
Reference Price (USD)
1+
$0.39397
500+
$0.3900303
1000+
$0.3860906
1500+
$0.3821509
2000+
$0.3782112
2500+
$0.3742715
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-quality RBLQ3LAM10TFTR Single Rectifier Diodes from Rohm Semiconductor, designed for efficient power conversion and reliable performance. These diodes are ideal for a wide range of applications, including power supplies, converters, and inverters. With robust construction and superior thermal management, they ensure long-lasting operation under demanding conditions. Features include low forward voltage drop, high surge current capability, and excellent reverse leakage characteristics. Whether for industrial or consumer electronics, Rohm Semiconductor's RBLQ3LAM10TFTR delivers unmatched reliability. Contact us today for more details and to request a quote!
Specifications
- Product Status: Active
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 640 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 30 µA @ 100 V
- Capacitance @ Vr, F: 140pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-128
- Supplier Device Package: PMDTM
- Operating Temperature - Junction: 175°C
Related Products
Microchip Technology
R42120
Microchip Technology
1N413B
Microchip Technology
JANTX1N6639US
Vishay General Semiconductor - Diodes Division
V2PM10L-M3/I
Microchip Technology
JANS1N6872UTK2
Microchip Technology
LSM345G/TR13
Microchip Technology
JANTXV1N6910UTK2/TR
Microchip Technology
R306080F
Comchip Technology
S2KB-HF
Micro Commercial Co