R8009KNXC7G
Rohm Semiconductor
Rohm Semiconductor
HIGH-SPEED SWITCHING NCH 800V 9A
$4.36
Available to order
Reference Price (USD)
1+
$4.36000
500+
$4.3164
1000+
$4.2728
1500+
$4.2292
2000+
$4.1856
2500+
$4.142
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of R8009KNXC7G, a premium Transistors - FETs, MOSFETs - Single from Rohm Semiconductor. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, R8009KNXC7G is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 59W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-3 Full Pack
Related Products
IXYS
IXTN200N10T
Diotec Semiconductor
DIT100N10
STMicroelectronics
STB28NM60ND
STMicroelectronics
STD3N80K5
onsemi
FDT86113LZ
onsemi
HUF75545S3ST
Vishay Siliconix
SI4434ADY-T1-GE3
IXYS
IXTH160N15T
Microchip Technology
DN3145N8-G
STMicroelectronics