R6520KNX3C16
Rohm Semiconductor
Rohm Semiconductor
650V 20A, TO-220AB, HIGH-SPEED S
$4.74
Available to order
Reference Price (USD)
1+
$4.74000
500+
$4.6926
1000+
$4.6452
1500+
$4.5978
2000+
$4.5504
2500+
$4.503
Exquisite packaging
Discount
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Boost your electronic applications with R6520KNX3C16, a reliable Transistors - FETs, MOSFETs - Single by Rohm Semiconductor. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, R6520KNX3C16 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 205mOhm @9.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 630µA
- Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 220W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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