R6504KNJTL
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 650V 4A LPTS
$2.49
Available to order
Reference Price (USD)
1+
$2.49000
500+
$2.4651
1000+
$2.4402
1500+
$2.4153
2000+
$2.3904
2500+
$2.3655
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose R6504KNJTL by Rohm Semiconductor. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with R6504KNJTL inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 130µA
- Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 58W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LPTS
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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