R6076ENZ1C9
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 600V 76A TO247
$0.00
Available to order
Reference Price (USD)
1+
$9.73000
10+
$8.79400
450+
$6.95300
900+
$6.33950
1,350+
$5.72600
Exquisite packaging
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Upgrade your electronic designs with R6076ENZ1C9 by Rohm Semiconductor, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, R6076ENZ1C9 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 42mOhm @ 44.4A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 120W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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