R6025JNZ4C13
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 600V 25A TO247G
$9.96
Available to order
Reference Price (USD)
1+
$9.96000
500+
$9.8604
1000+
$9.7608
1500+
$9.6612
2000+
$9.5616
2500+
$9.462
Exquisite packaging
Discount
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Optimize your electronic systems with R6025JNZ4C13, a high-quality Transistors - FETs, MOSFETs - Single from Rohm Semiconductor. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, R6025JNZ4C13 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 182mOhm @ 12.5A, 15V
- Vgs(th) (Max) @ Id: 7V @ 4.5mA
- Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 15 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 306W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247G
- Package / Case: TO-247-3
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