R6020ANZC8
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 600V 20A TO3PF
$0.00
Available to order
Reference Price (USD)
1+
$3.66000
10+
$3.28400
360+
$2.55300
720+
$2.29081
1,080+
$1.93200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with R6020ANZC8, a premium Transistors - FETs, MOSFETs - Single from Rohm Semiconductor. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust R6020ANZC8 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 4.15V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 120W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PF
- Package / Case: TO-3P-3 Full Pack
Related Products
Infineon Technologies
IPB023N04NG
Infineon Technologies
IRL2703STRL
Microsemi Corporation
2N6758
Infineon Technologies
IRFS4310PBF
IXYS
IXTP15N20T
STMicroelectronics
STL25N15F4
STMicroelectronics
STB22NS25ZT4
Vishay Siliconix
IRFZ10
Infineon Technologies
IPP100N04S204AKSA1
Infineon Technologies