R6007JND3TL1
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 600V 7A TO252
$2.01
Available to order
Reference Price (USD)
1+
$2.01000
500+
$1.9899
1000+
$1.9698
1500+
$1.9497
2000+
$1.9296
2500+
$1.9095
Exquisite packaging
Discount
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Boost your electronic applications with R6007JND3TL1, a reliable Transistors - FETs, MOSFETs - Single by Rohm Semiconductor. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, R6007JND3TL1 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 780mOhm @ 3.5A, 15V
- Vgs(th) (Max) @ Id: 7V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 15 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 96W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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