R6006JNXC7G
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 600V 6A TO220FM
$3.12
Available to order
Reference Price (USD)
1+
$3.12000
500+
$3.0888
1000+
$3.0576
1500+
$3.0264
2000+
$2.9952
2500+
$2.964
Exquisite packaging
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Boost your electronic applications with R6006JNXC7G, a reliable Transistors - FETs, MOSFETs - Single by Rohm Semiconductor. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, R6006JNXC7G meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 936mOhm @ 3A, 15V
- Vgs(th) (Max) @ Id: 7V @ 800µA
- Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 15 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 43W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-3 Full Pack
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