R6006JNJGTL
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 600V 6A LPTS
$2.78
Available to order
Reference Price (USD)
1+
$2.78000
500+
$2.7522
1000+
$2.7244
1500+
$2.6966
2000+
$2.6688
2500+
$2.641
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose R6006JNJGTL by Rohm Semiconductor. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with R6006JNJGTL inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 936mOhm @ 3A, 15V
- Vgs(th) (Max) @ Id: 7V @ 800µA
- Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 15 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 86W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LPTS
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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