R1RW0408DGE-2LR#B0
Renesas Electronics America Inc
Renesas Electronics America Inc
IC SRAM 4MBIT PARALLEL 36SOJ
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Boost your system's efficiency with Renesas Electronics America Inc R1RW0408DGE-2LR#B0 Memory ICs, designed for high-demand environments. Ideal for AI, machine learning, and edge computing, these ICs provide ultra-fast processing, error resilience, and compact form factors. Renesas Electronics America Inc R1RW0408DGE-2LR#B0 is synonymous with excellence in memory technology. Reach out to us now for expert advice and competitive pricing!
Specifications
- Product Status: Obsolete
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM
- Memory Size: 4Mb (512K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 12ns
- Access Time: 12 ns
- Voltage - Supply: 3V ~ 3.6V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 36-BSOJ (0.400", 10.16mm Width)
- Supplier Device Package: 36-SOJ
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