QJD1210011
Powerex Inc.
Powerex Inc.
MOSFET 2N-CH 1200V 100A SIC
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Boost your project s performance with Powerex Inc. s QJD1210011, a standout in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components offer superior features such as high efficiency, low noise, and extended lifespan, making them suitable for a variety of advanced applications. From IoT devices to energy-efficient systems, QJD1210011 provides the reliability you need. Don t wait reach out to us today for more information and to request a sample of QJD1210011.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Rds On (Max) @ Id, Vgs: 25mOhm @ 100A, 20V
- Vgs(th) (Max) @ Id: 5V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 500nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 10200pF @ 800V
- Power - Max: 900W
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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