PTFA261702E V1
Infineon Technologies
Infineon Technologies
IC FET RF LDMOS 170W H-30275-4
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Infineon Technologies presents the PTFA261702E V1 RF MOSFET series the ultimate solution for high-power RF amplification. With exceptional linearity and low intermodulation distortion, these FETs excel in broadcast equipment and military communications. Their rugged construction ensures longevity even in harsh conditions. Don t compromise on quality request a quote today and experience the difference!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 2.66GHz
- Gain: 15dB
- Voltage - Test: 28 V
- Current Rating (Amps): 10µA
- Noise Figure: -
- Current - Test: 1.8 A
- Power - Output: 170W
- Voltage - Rated: 65 V
- Package / Case: 2-Flatpack, Fin Leads
- Supplier Device Package: H-30275-4
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