PTFA212001FV4XWSA1
Infineon Technologies
Infineon Technologies
IC FET RF LDMOS 200W H-37260-2
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance PTFA212001FV4XWSA1 RF MOSFETs from Infineon Technologies, designed for superior signal amplification in demanding applications. These transistors feature low noise, high gain, and excellent thermal stability, making them ideal for RF and microwave circuits. Commonly used in communication systems, radar, and wireless infrastructure, our FETs ensure reliable performance in critical environments. Contact us today for pricing and technical support let s power your next project together!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 2.14GHz
- Gain: 15.8dB
- Voltage - Test: 30 V
- Current Rating (Amps): 10µA
- Noise Figure: -
- Current - Test: 1.6 A
- Power - Output: 50W
- Voltage - Rated: 65 V
- Package / Case: 2-Flatpack, Fin Leads, Flanged
- Supplier Device Package: H-37260-2
Related Products
Infineon Technologies
PTFA181001EV4XWSA1
Ampleon USA Inc.
BLF7G20L-200,118
onsemi
MPF102_D27Z
NXP USA Inc.
BF245B,112
CEL
NE3511S02-A
NXP USA Inc.
MRF18060ALR5
Infineon Technologies
PTFA212001F1V4XWSA1
Ampleon USA Inc.
BLF6G22-180RN,112
NXP USA Inc.
MW7IC2425NBR1
Infineon Technologies