PTAB182002TCV2XWSA1
Infineon Technologies
Infineon Technologies
IC RF FET LDMOS 190W H-49248H-4
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The PTAB182002TCV2XWSA1 by Infineon Technologies redefines reliability in RF power transistors. Boasting high breakdown voltage and superior gain bandwidth, these MOSFETs are indispensable in medical imaging and industrial heating systems. Their design prioritizes energy efficiency without sacrificing power. Interested? Send us your requirements and we ll provide customized solutions!
Specifications
- Product Status: Obsolete
- Transistor Type: -
- Frequency: -
- Gain: -
- Voltage - Test: -
- Current Rating (Amps): -
- Noise Figure: -
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