PSMN7R0-60YS,115
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 60V 89A LFPAK56
$1.64
Available to order
Reference Price (USD)
1,500+
$0.46200
3,000+
$0.43120
7,500+
$0.40964
10,500+
$0.39424
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover PSMN7R0-60YS,115, a versatile Transistors - FETs, MOSFETs - Single solution from Nexperia USA Inc., a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 6.4mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2712 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 117W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
Related Products
Vishay Siliconix
SQD40N06-14L_GE3
Texas Instruments
CSD17301Q5A
Infineon Technologies
IAUT300N08S5N012ATMA2
Infineon Technologies
IPA95R1K2P7XKSA1
Toshiba Semiconductor and Storage
TK20A60W,S5VX
STMicroelectronics
STF10N65K3
Alpha & Omega Semiconductor Inc.
AOD4132
Diodes Incorporated
DMN2028USS-13
Infineon Technologies
IPD70R1K4CEAUMA1
Vishay Siliconix