PSMN7R0-40LS,115
NXP USA Inc.
NXP USA Inc.
MOSFET N-CH 40V 40A 8DFN
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Boost your electronic applications with PSMN7R0-40LS,115, a reliable Transistors - FETs, MOSFETs - Single by NXP USA Inc.. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, PSMN7R0-40LS,115 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1286 pF @ 12 V
- FET Feature: -
- Power Dissipation (Max): 65W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN3333 (3.3x3.3)
- Package / Case: 8-VDFN Exposed Pad
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