PSMN6R3-120PS
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 120V 70A TO220AB
$4.22
Available to order
Reference Price (USD)
1+
$3.17000
50+
$2.54920
100+
$2.32270
500+
$1.88078
1,000+
$1.58620
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
PSMN6R3-120PS by Nexperia USA Inc. is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, PSMN6R3-120PS ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 120 V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 6.7mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 207.1 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 11384 pF @ 60 V
- FET Feature: -
- Power Dissipation (Max): 405W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
Related Products
Vishay Siliconix
SIDR578EP-T1-RE3
Vishay Siliconix
SIAA02DJ-T1-GE3
Rohm Semiconductor
RQ5E035ATTCL
Infineon Technologies
IPAN60R210PFD7SXKSA1
Infineon Technologies
IPI65R190C6XKSA1
STMicroelectronics
STB18N60M2
Diodes Incorporated
DMT8012LK3-13
Panjit International Inc.
PJA3441_R1_00001
Infineon Technologies
IRFP4127PBF
Infineon Technologies