PSMN3R9-100YSFX
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 100V 120A LFPAK56
$3.07
Available to order
Reference Price (USD)
1+
$3.07000
500+
$3.0393
1000+
$3.0086
1500+
$2.9779
2000+
$2.9472
2500+
$2.9165
Exquisite packaging
Discount
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Discover high-performance PSMN3R9-100YSFX from Nexperia USA Inc., a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, PSMN3R9-100YSFX delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
- Rds On (Max) @ Id, Vgs: 4.3mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 245W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56; Power-SO8
- Package / Case: SOT-1023, 4-LFPAK
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