PSMN1R1-30PL,127
NXP Semiconductors
NXP Semiconductors
NEXPERIA PSMN1R1-30PL - 120A, 30
$1.79
Available to order
Reference Price (USD)
1+
$3.24000
50+
$2.61260
100+
$2.35130
500+
$1.82876
1,000+
$1.51525
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose PSMN1R1-30PL,127 by NXP Semiconductors. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with PSMN1R1-30PL,127 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 14850 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 338W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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