PSMN006-20K,518
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 20V 32A 8SO
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Nexperia USA Inc. presents PSMN006-20K,518, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, PSMN006-20K,518 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 5mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id: 700mV @ 1mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 2.5 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 8.3W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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