PMZB420UN,315
NXP USA Inc.
NXP USA Inc.
MOSFET N-CH 30V 900MA DFN1006B-3
$0.09
Available to order
Reference Price (USD)
1+
$0.09000
500+
$0.0891
1000+
$0.0882
1500+
$0.0873
2000+
$0.0864
2500+
$0.0855
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of PMZB420UN,315, a premium Transistors - FETs, MOSFETs - Single from NXP USA Inc.. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, PMZB420UN,315 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 490mOhm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.98 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN1006B-3
- Package / Case: SC-101, SOT-883
Related Products
onsemi
FQA9P25
Infineon Technologies
IRF7748L1TRPBF
Diodes Incorporated
DMN2500UFB4-7
onsemi
2SK1447LS
Vishay Siliconix
SI2333CDS-T1-E3
Toshiba Semiconductor and Storage
TK5R3A06PL,S4X
STMicroelectronics
STH250N6F3-6
Infineon Technologies
BUZ32HXKSA1
Taiwan Semiconductor Corporation
TSM020N04LCR RLG
Diodes Incorporated