PMXB120EPEZ
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET P-CH 30V 2.4A DFN1010D-3
$0.40
Available to order
Reference Price (USD)
5,000+
$0.12708
10,000+
$0.11993
25,000+
$0.11135
50,000+
$0.10777
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with PMXB120EPEZ, a reliable Transistors - FETs, MOSFETs - Single by Nexperia USA Inc.. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, PMXB120EPEZ meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 120mOhm @ 2.4A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 309 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 400mW (Ta), 8.3W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN1010D-3
- Package / Case: 3-XDFN Exposed Pad
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