PMWD30UN,518
NXP USA Inc.
NXP USA Inc.
MOSFET 2N-CH 30V 5A 8TSSOP
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Enhance your electronic applications with NXP USA Inc. s PMWD30UN,518, a leading product in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are known for their high-speed performance, low energy consumption, and robust design. Perfect for use in switching regulators, audio systems, and communication devices. Discover the benefits of PMWD30UN,518 today get in touch with us for a detailed quote and technical support.
Specifications
- Product Status: Obsolete
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5A
- Rds On (Max) @ Id, Vgs: 33mOhm @ 3.5A, 4.5V
- Vgs(th) (Max) @ Id: 700mV @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1478pF @ 10V
- Power - Max: 2.3W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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