PMV45EN,215
NXP USA Inc.
NXP USA Inc.
MOSFET N-CH 30V 5.4A TO236AB
$0.06
Available to order
Reference Price (USD)
1+
$0.06000
500+
$0.0594
1000+
$0.0588
1500+
$0.0582
2000+
$0.0576
2500+
$0.057
Exquisite packaging
Discount
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Optimize your electronic systems with PMV45EN,215, a high-quality Transistors - FETs, MOSFETs - Single from NXP USA Inc.. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, PMV45EN,215 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 42mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 280mW (Tj)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23 (TO-236AB)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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