PMT200EPEX
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET P-CH 70V 2.4A SOT223
$0.22
Available to order
Reference Price (USD)
1,000+
$0.24310
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Nexperia USA Inc. presents PMT200EPEX, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, PMT200EPEX delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 70 V
- Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 167mOhm @ 2.4A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15.9 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 822 pF @ 35 V
- FET Feature: -
- Power Dissipation (Max): 800mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
Related Products
IXYS
IXFA80N25X3-TRL
Vishay Siliconix
SI4634DY-T1-GE3
Vishay Siliconix
SI4848DY-T1-E3
Rohm Semiconductor
RZF020P01TL
Infineon Technologies
IPI100N06S3L04XK
Infineon Technologies
IPD60R600P7ATMA1
onsemi
FDMC86570L
Renesas Electronics America Inc
2SK2371(2)-A
STMicroelectronics
STP130N8F7
Vishay Siliconix