PMPB33XN,115
NXP USA Inc.
NXP USA Inc.
MOSFET N-CH 30V 4.3A DFN2020MD-6
$0.08
Available to order
Reference Price (USD)
3,000+
$0.16520
Exquisite packaging
Discount
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Discover PMPB33XN,115, a versatile Transistors - FETs, MOSFETs - Single solution from NXP USA Inc., a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 47mOhm @ 4.3A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 505 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta), 8.3W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN1010B-6
- Package / Case: 6-XFDFN Exposed Pad
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