PMN20EN,115
NXP USA Inc.
NXP USA Inc.
MOSFET N-CH 30V 6.7A 6TSOP
$0.10
Available to order
Reference Price (USD)
1+
$0.10000
500+
$0.099
1000+
$0.098
1500+
$0.097
2000+
$0.096
2500+
$0.095
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover PMN20EN,115, a versatile Transistors - FETs, MOSFETs - Single solution from NXP USA Inc., a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 6.7A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 20mOhm @ 6.7A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 545mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-74
- Package / Case: SC-74, SOT-457
Related Products
Transphorm
TP65H035WSQA
onsemi
MCH3406-TL-E
Yangzhou Yangjie Electronic Technology Co.,Ltd
YJL2302A-F2-0000HF
onsemi
NTB23N03RG
Vishay Siliconix
IRF530SPBF
Diodes Incorporated
DMN3071LFR4-7R
Infineon Technologies
IRF1404STRLPBF
Infineon Technologies
IPB80P03P405ATMA1
STMicroelectronics
STFI40N60M2
Vishay Siliconix