PMGD8000LN,115
NXP USA Inc.
NXP USA Inc.
MOSFET 2N-CH 30V 0.125A 6TSSOP
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The PMGD8000LN,115 from NXP USA Inc. is a top choice in the Discrete Semiconductor Products category, particularly for Transistors - FETs, MOSFETs - Arrays. With features like high breakdown voltage, low gate drive, and excellent thermal performance, these components are ideal for power electronics and high-frequency applications. Whether for consumer electronics or industrial machinery, PMGD8000LN,115 delivers consistent quality. Contact us now to learn more and secure your supply of NXP USA Inc. s premium semiconductors.
Specifications
- Product Status: Obsolete
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 125mA
- Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V
- Vgs(th) (Max) @ Id: 1.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 18.5pF @ 5V
- Power - Max: 200mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP
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