PJX8872B_R1_00001
Panjit International Inc.
Panjit International Inc.
60V N-CHANNEL ENHANCEMENT MODE M
$0.47
Available to order
Reference Price (USD)
1+
$0.47000
500+
$0.4653
1000+
$0.4606
1500+
$0.4559
2000+
$0.4512
2500+
$0.4465
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PJX8872B_R1_00001 from Panjit International Inc. is a top choice in the Discrete Semiconductor Products category, particularly for Transistors - FETs, MOSFETs - Arrays. With features like high breakdown voltage, low gate drive, and excellent thermal performance, these components are ideal for power electronics and high-frequency applications. Whether for consumer electronics or industrial machinery, PJX8872B_R1_00001 delivers consistent quality. Contact us now to learn more and secure your supply of Panjit International Inc. s premium semiconductors.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
- Rds On (Max) @ Id, Vgs: 3Ohm @ 600mA, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.82nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 34pF @ 25V
- Power - Max: 300mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
Related Products
Vishay Siliconix
SIA921EDJ-T4-GE3
onsemi
FDMA1029PZ
Taiwan Semiconductor Corporation
TSM6968DCA RVG
Diodes Incorporated
DMGD7N45SSD-13
Diodes Incorporated
DMC3730UVT-13
Vishay Siliconix
SI6954ADQ-T1-GE3
onsemi
NTLGD3502NT1G
STMicroelectronics
STS10DN3LH5
onsemi
FDMD82100
Diodes Incorporated